ticp106 series silicon controlled rectifiers
1 march 1988 - revised september 2002 specifications are subject to change without notice. lp package (top view) mdc1aa g a k 1 2 3 lp package with formed leads (top view) mdc1ab g a k 1 2 3 2 a continuous on-state current 15 a surge-current glass passivated wafer 400 v to 600 v off-state voltage max i gt of 200 a package options package packing part # suffix lp bulk (none) lp with fomed leads tape and reel r absolute maximum ratings over operating case temperature (unless otherwise noted) notes: 1. these values apply when the gate-cathode resistance r gk = 1 k ? . 2. these values apply for continuous dc operation with resistive load. above 25c derate linearly to zero at 110c. 3. this value applies for one 50 hz half-sine-wave when the device is operating at (or below) the rated value of peak reve rse volta ge and on-state current. surge may be repeated after the device has returned to original ther mal eq uilibrium. 4. this value applies for a maxi mum averaging time of 20 ms. rating symbol value unit repetitive peak off-state voltage (see note 1) ticp106d ticp106m v drm 400 600 v repetitive peak reverse voltage ticp106d ticp106m v rrm 400 600 v continuous on-state current at (or below) 25c case temperature (see note 2) i t(rms) 2 a surge on-state current (see note 3) i tsm 15 a peak positive gate current (pulse width 300 s) i gm 0.2 a average gate power dissipation (see note 4) p g(av) 0.3 w operating case temperature range t c -40 to +110 c storage temperature range t stg -40 to +125 c lead temperature 3.2 mm from case for 10 seconds t l 230 c obsolete
ticp106 series silicon controlled rectifiers 2
march 1988 - revised september 2002 specifications are subject to change without notice. note 5: this parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm r gk = 1 k ? 20 a i rrm repetitive peak reverse current v r = rated v rrm i g = 0 200 a i gt gate trigger current v aa = 12 v r l = 100 ? t p(g) 20 s 5 200 a v gt gate trigger voltage v aa = 12 v r l = 100 ? r gk =1k ? t p(g) 20 s 0.4 1 v i h holding current v aa = 12 v r gk =1k ? initiating i t = 10 ma 5 ma v t on-state voltage i t =1a (see note 5) 1.5 v obsolete
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